aph9-lab6-15

Published September 25, 2013 at 1024 × 768 in MOSFET/BJT Lab
Place the chips in a boron furnace at $950^oC$ for 30 minutes to dope the source/drain regions N-type.

Place the chips in a boron furnace at $950^oC$ for 30 minutes to dope the source/drain regions N-type.

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